CBSE 2023 · Region 4 · Set 1 · Q33 · 5 marks
(i)A germanium crystal is doped with antimony. With the help of energy-band diagram, explain how the conductivity of the doped crystal is affected.(ii)Briefly explain the two processes involved in the formation of a p-n junction.(iii)What will the effect of ($\displaystyle 1$) forward biasing, and ($\displaystyle 2$) reverse biasing be on the width of depletion layer in a p-n junction diode?(i)With the help of a circuit diagram, briefly explain the working of a full-wave rectifier using $\displaystyle \mathrm{p}-\mathrm{n}$ junction diodes.(ii)Draw V - I characteristics of a p-n junction diode. Explain how these characteristics make a diode suitable for rectification.(iii)Carbon and silicon have the same lattice structure. Then why is carbon an insulator but silicon a semiconductor?
(i)
A germanium crystal is doped with antimony. With the help of energy-band diagram, explain how the conductivity of the doped crystal is affected.
(ii)
Briefly explain the two processes involved in the formation of a p-n junction.
(iii)
What will the effect of ($\displaystyle 1$) forward biasing, and ($\displaystyle 2$) reverse biasing be on the width of depletion layer in a p-n junction diode?
(i)
With the help of a circuit diagram, briefly explain the working of a full-wave rectifier using $\displaystyle \mathrm{p}-\mathrm{n}$ junction diodes.
(ii)
Draw V - I characteristics of a p-n junction diode. Explain how these characteristics make a diode suitable for rectification.
(iii)
Carbon and silicon have the same lattice structure. Then why is carbon an insulator but silicon a semiconductor?
Marking-scheme solution
(i)
With proper level of doping, the number of conduction electrons can be made much larger than the number of holes. Due to this conductivity of the doped crystal increases.
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