CBSE 2023 · Region 5 · Set 1 · Q32 · 5 marks
Draw the circuit arrangement for studying V-I characteristics of a $\displaystyle \mathrm{p}-\mathrm{n}$ junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode. Describe briefly the following terms: (i) minority carrier injection in forward biasing and (ii) breakdown voltage in reverse biasing.Name two important processes involved in the formation of a p-n junction diode. With the help of a circuit diagram, explain the working of junction diode as a full wave rectifier. Draw its input and output waveforms. State the characteristic property of a junction diode that makes it suitable for rectification.
Draw the circuit arrangement for studying V-I characteristics of a $\displaystyle \mathrm{p}-\mathrm{n}$ junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode. Describe briefly the following terms: (i) minority carrier injection in forward biasing and (ii) breakdown voltage in reverse biasing.
Name two important processes involved in the formation of a p-n junction diode. With the help of a circuit diagram, explain the working of junction diode as a full wave rectifier. Draw its input and output waveforms. State the characteristic property of a junction diode that makes it suitable for rectification.
Marking-scheme solution
(a) Circuit arrangement for V-I characteristics of p-n junction in (i) forward bias ($\displaystyle 1$) (ii) reverse bias ($\displaystyle 1$) V-I characteristics ($\displaystyle 1$) Explanation of (i) Minority carrier injection in forward bias ($\displaystyle 1$) (ii) Breakdown Voltage in reverse bias ($\displaystyle 1$)
(i)
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CBSE Class 12 Physics past-paper question from the 2023board exam, with the answer as CBSE’s own marking scheme gives it. Where our answers come from.