Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two type of dopants used in doping, Si…

Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two type of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction : diffusion and drift. When such a junction is formed, a 'depletion layer' is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.

During formation of a p-n junction :

a layer of negative charge on n -side and a layer of positive charge on p -side appear.

a layer of positive charge on $\displaystyle n$-side and a layer of negative charge on p -side appear.

the electrons on p -side of the junction move to n -side initially.

initially diffusion current is small and drift current is large.

When a pentavalent atom occupies the position of an atom in the crystal lattice of Si , four of its electrons form covalent bonds with four silicon neighbours, while the fifth remains bound to the parent atom. The energy required to set this electron free is about :

0.$\displaystyle 5$ eV

0.$\displaystyle 1$ eV

0.$\displaystyle 05$ eV

0.$\displaystyle 01$ eV

Which of the following is a donor impurity atom for Ge?

Boron

Antimony

Aluminium

Indium