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CBSE 2025 · Region 6 · Set 1 · Q30 · 4 marks

Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two type of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction : diffusion and drift. When such a junction is formed, a 'depletion layer' is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.
(i)
Which of the following is a donor impurity atom for Ge ?
(A)
Boron
(B)
Antimony
(C)
Aluminium
(D)
Indium
(ii)
When a pentavalent atom occupies the position of an atom in the crystal lattice of Si , four of its electrons form covalent bonds with four silicon neighbours, while the fifth remains bound to the parent atom. The energy required to set this electron free is about : ) $\displaystyle \mathrm{C}_{0}$
(A)
0.$\displaystyle 5$ eV
(B)
0.$\displaystyle 1$ eV
(C)
0.$\displaystyle 05$ eV
(D)
0.$\displaystyle 01$ eV
(iii)
During formation of a p-n junction :
(A)
a layer of negative charge on n -side and a layer of positive charge on p -side appear.
(B)
a layer of positive charge on $\displaystyle n$-side and a layer of negative charge on p -side appear.
(C)
the electrons on p -side of the junction move to n -side initially.
(D)
initially diffusion current is small and drift current is large.
(iv)
In reverse-biased p-n junction :
(A)
the drift current is of the order of few mA .
(B)
the applied voltage mostly drops across the depletion region.
(C)
the depletion region width decreases.
(D)
the current increases with increase in applied voltage.

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