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Physics · 2026 · 3 marks
Semiconductor Electronics: Materials, Devices and Simple CircuitsSemiconductor Diode3 marksUnderstandshort answer
CBSE 2026 · Region 1 · Set 3 · Q27
(a) Draw the V-I characteristics of silicon diode. (b) Explain the following terms: (i) minority carrier injection in forward bias (ii) breakdown…
(a)
Draw the V-I characteristics of silicon diode.
(b)
Explain the following terms :
(i)
minority carrier injection in forward bias
(ii)
breakdown voltage in reverse bias
Marking-scheme solution
(a)
(b)(i)
Due to applied voltage, electrons from n-side cross the depletion region and reach p-side and holes from p-side cross the junction reach the n-side. This process under forward bias is called as minority charge injection.
(ii)
The current under reverse bias is essentially voltage independent up to a critical reverse bias voltage known as breakdown voltage.
Alternatively:
The voltage in Reverse bias after which the value of reverse current starts increasing sharply is called breakdown voltage.
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CBSE Class 12 Physics past-paper question from the 2026 board exam, with the answer as CBSE’s own marking scheme gives it. Where our answers come from.