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Physics · 2023 · 2 marks
Semiconductor Electronics: Materials, Devices and Simple Circuitsp-n Junction2 marksUnderstandvery short answer
CBSE 2023 · Region 1 · Set 1 · Q25
Briefly explain how the diffusion and drift currents contribute to the formation of potential barrier in a p-n junction diode.
Briefly explain how the diffusion and drift currents contribute to the formation of potential barrier in a p-n junction diode.
Marking-scheme solution
The diffusion current due to concentration gradient at the junction forms a space charge region consisting of immobile charge carriers. Due to this an electric field is generated at the junction giving rise to drift current in a direction opposite to diffusion current.The potential at which diffusion current becomes equal to drift current is called potential barrier.
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CBSE Class 12 Physics past-paper question from the 2023 board exam, with the answer as CBSE’s own marking scheme gives it. Where our answers come from.