Pure Si at 500K has equal number of electron ( n_e ) and hole ( n_h ) concentrations of 1.5 × 10^16 m^-3. Doping by indium increases n_h to 4.5 ×…

Pure Si at 500K has equal number of electron $\displaystyle \left(\mathrm{n}_{\mathrm{e}}\right)$ and hole $\displaystyle \left(\mathrm{n}_{\mathrm{h}}\right)$ concentrations of $\displaystyle 1.5 \times 10^{16} \mathrm{~m}^{-3}$. Doping by indium increases $\displaystyle \mathrm{n}_{\mathrm{h}}$ to $\displaystyle 4.5 \times 10^{22} \mathrm{~m}^{-3}$. The doped semiconductor is of :