From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is 10^x, for R_B =10 k Ω,…

From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is $\displaystyle 10^x$, for $\displaystyle \mathrm{R}_{\mathrm{B}}=10 \mathrm{k} \Omega$, and $\displaystyle \mathrm{R}_{\mathrm{C}}=1 \mathrm{k} \Omega$. The value of $\displaystyle x$ is $\displaystyle \_\_\_\_$